Spatial Mapping of Electroluminescence Due to Impact Ionization in High Electron Mobility Transistors
Abstract:For the first time to our knowledge, the use of a Raman microspectrometer is proposed for recording electroluminescence spectra as well as generating complete electroluminescence maps of areas selected on the surface of a pseudomorphic high electron mobility transistor (PHEMT). More particularly, this microspectrometer was used to investigate the impact ionization effect in different regions of the PHEMT located between gate and drain.
Document Type: Research Article
Affiliations: 1: Institut d'Electronique et de Micróelectronique du Nord, Avenue Poincaré - BP 69, 59652 Villeneuve d'Ascq, France. 2: Laboratoire de Spectrochimie Infrarouge et Raman, Centre d'Etudes et de Recherches Lasers et Applications, USTL Bat. C5 59655, Villeneuve d'Ascq, France.
Publication date: October 1, 2000
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