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Stress Dependence of Infrared-Active Mode of the beta-Si3N4 Ceramic Appearing at 1020 cm-1 Measured by Micro-FT-IR Spectroscopy

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The stress dependence of the beta-Si3N4 infrared-active band appearing at ~ 1020 cm-1 was evaluated by using micro-FT-IR. A fourpoint-bending jig was built to apply stress to the sample. Two beta Si3N4 ceramics, prepared by pressureless sintering and hot-pressed sintering, were examined. The hot-pressed sample showed a linear relation to applied stress, whereas the pressureless sintered sample showed relatively scattered stress dependence due to the inferior signal-to-noise ratio of the spectra. The stress dependence parameter of the 1020 cm-1 band was evaluated as ~ 2 cm-1/GPa.


Document Type: Research Article

DOI: http://dx.doi.org/10.1366/0003702981942771

Publication date: October 1, 1998

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