If you are experiencing problems downloading PDF or HTML fulltext, our helpdesk recommend clearing your browser cache and trying again. If you need help in clearing your cache, please click here . Still need help? Email help@ingentaconnect.com

Comparative Studies of Hydrogen Termination on SingleCrystal Silicon Surfaces by FT-IR and Contact-Angle Measurements

$29.00 plus tax (Refund Policy)

Buy Article:

Abstract:

The hydrogen termination process on a Si(100) surface has been studied by multiple internal reflection infrared spectroscopy (MIRIS) and contact-angle measurements. Three main silicon hydride absorption peaks at 2087, 2104, and 2114 cm -1 were found to gradually increase with the hydrofluoric (HF) acid etching. Eventually, a constant peak height was reached as an indication of complete hydrogen termination. Integration of all the surface hydrides absorption peaks (2000 to 2200 cm -1) provides direct quantitative evaluation of the hydrogen termination process. On the other hand, water contact-angle data were shown to consistently lag behind the IR measurement in determining the extent of hydrogen termination on the silicon surface. Analysis of the surface free energy of HFetched silicon surfaces indicates that the degree of the hydrogen termination determined by water contact-angle measurements is subjected to inaccuracies due to the preferential hydrogen-bonding interaction between the water and silicon surface oxide.

Keywords: HYDROGEN TERMINATION SILICON SURFACE FT-IR INFRARED SPECTROSCOPY CONTACT ANGLE

Document Type: Research Article

DOI: http://dx.doi.org/10.1366/0003702971939730

Publication date: December 1, 1997

More about this publication?
Related content

Tools

Favourites

Share Content

Access Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content
Cookie Policy
X
Cookie Policy
ingentaconnect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more