Skip to main content

Spectroscopic Studies of Heavily Carbon-Doped GaAs Grown by Metal Organic Chemical Vapor Epitaxy

Buy Article:

$29.00 plus tax (Refund Policy)

Abstract:

Spectroscopic studies of the minority electron lifetimes and photoluminescence efficiencies of heavily carbon-doped GaAs are reported. The GaAs layers were grown by metal organic chemical vapor epitaxy (MOVPE) at 650 C with carbon tetrabromide used as a dopant source. Combined minority electron lifetime and internal quantum efficiency measurements allowed us to determine the radiative decay times in heavily carbon-doped GaAs to be longer than that we would expect if a value for the radiative recombination constant of B = 2.0 X 10 -10 cm3 s -1 were used. Taking into account the effects of hole-hole and hole-ionized impurity scattering, we show that B decreases as hole density increases in heavily carbondoped GaAs. With the use of the revised values for B , the calculated radiative decay times were compatible with our measurements.

Keywords: RADIATIVE DECAY TIMES LUMINESCENCE EFFICIENCY RADIATIVE RECOMBINATION CONSTANT CARRIER-CARRIER INTERACTION BAND STRUCTURE CHANGES

Document Type: Research Article

DOI: http://dx.doi.org/10.1366/0003702971939677

Publication date: December 1, 1997

More about this publication?
sas/sas/1997/00000051/00000012/art00013
dcterms_title,dcterms_description,pub_keyword
6
5
20
40
5

Access Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content
Cookie Policy
X
Cookie Policy
ingentaconnect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more