Authors: Engelbrecht, J.A.A.; Botha, J.R.

Source: Applied Spectroscopy, Volume 51, Issue 3, Pages 106A-124A and 297-450 (March 1997) , pp. 433-437(5)

Publisher: Society for Applied Spectroscopy

Abstract:

Fourier transform infrared reflectance spectroscopy can be used to establish the height of the transverse optic mode peak of AlAs at 361 cm -1. The peak height is found to be linearly dependent on the aluminum content in Al x Ga 1-x As layers on GaAs substrates. Previ- ously published spectra for In x Ga 1-x As yielded a similar result for the In content, from the transverse optic mode peak of InAs at 220 cm -1. A quick and nondestructive technique is proposed for the determination of the aluminum and indium mole fraction in these structures.

Keywords: INFRARED REFLECTANCE AL X GA 1-X AS IN X GA 1-X AS

Document Type: Research article

DOI: http://dx.doi.org/10.1366/0003702971940332

Publication date: 1997-03-01

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