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Characterization of Interstitial Oxygen Striations in Silicon Single Crystals by the Micro-FT-IR Method

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Abstract:

We will demonstrate that our micro-FT-IR mapping system is highly effective for investigating the behavior of interstitial oxygen (Oi) in Czochralski-grown silicon single crystals. The micro-FT-IR system experiences high space resolution, and Oi striations of as-grown silicon single crystals or of oxygen micro-precipitation after a thermal treatment are quantitatively measured. Oi micro-distribution profiles of as-grown crystals exhibit regular or irregular intervals and height, depending upon their crystal growth conditions. Oxygen micro-precipitations along growth striations are dependent upon their initial Oi micro-distribution profiles, and anomalous oxygen micro-precipitation is not observed.

Keywords: Analysis for oxygen in Si single crystal; Infrared

Document Type: Invited Paper

DOI: http://dx.doi.org/10.1366/0003702934067711

Affiliations: Isobe R&D Center, Shin-Etsu Handotai Co., Ltd., Isobe 2-13-1, Annaka, Gunma 379-01, Japan

Publication date: September 1, 1993

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