Characterization of Interstitial Oxygen Striations in Silicon Single Crystals by the Micro-FT-IR Method

$29.00 plus tax (Refund Policy)

Buy Article:

Abstract:

We will demonstrate that our micro-FT-IR mapping system is highly effective for investigating the behavior of interstitial oxygen (Oi) in Czochralski-grown silicon single crystals. The micro-FT-IR system experiences high space resolution, and Oi striations of as-grown silicon single crystals or of oxygen micro-precipitation after a thermal treatment are quantitatively measured. Oi micro-distribution profiles of as-grown crystals exhibit regular or irregular intervals and height, depending upon their crystal growth conditions. Oxygen micro-precipitations along growth striations are dependent upon their initial Oi micro-distribution profiles, and anomalous oxygen micro-precipitation is not observed.

Keywords: Analysis for oxygen in Si single crystal; Infrared

Document Type: Invited Paper

DOI: http://dx.doi.org/10.1366/0003702934067711

Affiliations: Isobe R&D Center, Shin-Etsu Handotai Co., Ltd., Isobe 2-13-1, Annaka, Gunma 379-01, Japan

Publication date: September 1, 1993

More about this publication?
Related content

Tools

Favourites

Share Content

Access Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content
Cookie Policy
X
Cookie Policy
ingentaconnect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more