Correcting for Oxygen Concentrations in Single-Side Polished Wafers

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Abstract:

The use of single-side polished (SSP) silicon wafers is becoming more commonplace in the semiconductor industry, due to the cost involved in polishing wafers. The determination of the oxygen concentration in such wafers is subject to various errors as a result of the scattering of radiation from the uneven backsides. Moreover, the prescribed ASTM procedures for such a determination are based on samples with both sides polished. In addition, one is sometimes required to compare oxygen concentrations in SSP and double-side polished (DSP) wafers.

Keywords: FT-IR; Oxygen impurity; Silicon

Document Type: Short Communication

DOI: http://dx.doi.org/10.1366/0003702914337830

Affiliations: IBM East Fishkill Facility, Route 52, Hopewell Junction, New York 12533; permanent address: Physics Department, University of Port Elizabeth, P.O. Box 1600, Port Elizabeth 6000, Rep. of South Africa

Publication date: January 1, 1991

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