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The Application of ICP Spectroscopy to Model the Chemistry Occurring in Plasma-Etch Reactors: Part I

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Abstract:

ICP spectroscopy utilizing both gaseous and/or liquid sample introduction was used to model chemical components produced in plasma etch reactors. Single plasma gas chemistries including Ar and CF4 and additive gas systems of CHF3-O2 and CF4-O2 were characterized with the use of a dispersive monochromator/photodiode array detection system. Experimental techniques and equipment comparisons of plasma sources and detection systems for plasma chemistry modeling are discussed. Identification of atomic and molecular species produced in each plasma source for these gas chemistries and sample components was determined and compared.

Keywords: Atomic emission spectroscopy; Inductively coupled plasma; Molecular emission spectroscopy; Plasma etching

Document Type: Research Article

DOI: http://dx.doi.org/10.1366/0003702894204335

Affiliations: 1: Motorola Semiconductor Products Sector, P.O. Box 6000, B-1, Austin, Texas 78762 2: Pacific Scientific, HTL Division, 1800 Highland Ave., Duarte, California 91010 3: Department of Chemistry, Arizona State University, Tempe, Arizona 85287

Publication date: November 1, 1989

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