Intriguing Absorption Band Behavior of IR Reflectance Spectra of Silicon Dioxide on Silicon

Authors: Wong, James S.; Yen, Yu-Sze

Source: Applied Spectroscopy, Volume 42, Issue 4, Pages 537-707 (May/June 1988) , pp. 598-604(7)

Publisher: Society for Applied Spectroscopy

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Abstract:

Infrared reflectance spectra of a thermally grown 30-nm SiO₂ film on a Si wafer were measured as a function of incident angle and polarization. Spectra measured with s-polarized light resemble the published extinction coefficient for SiO₂. The p-polarized spectra show significant distortions at all incident angles. Bands change in frequency and intensity and can even invert as the incident angle increases beyond the Brewster angle of the Si substrate. Spectral simulations using the classical electromagnetic equations reproduce these distortions.

Keywords: Infrared spectroscopy; Surface analysis; Reflection spectroscopy; Silicon dioxide; Silicon

Document Type: Research article

DOI: http://dx.doi.org/10.1366/0003702884429175

Affiliations: 1: IBM General Products Division, 5600 Cottle Road, San Jose, California 95193

Publication date: 1988-05-01

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