Deposited films of amorphous silicon nitride, Si3N4, which are used for surface protection or as an insulating interlayer in microelectronic devices, have been studied by IR. The observed changes in the vibrational frequency location of the broad infrared Si-N
antisymmetrical stretching absorption in the spectra of various plasma deposited Si3N4 films indicate the formation and inclusion of impurities within the silicon nitride network. The deposited films are composed principally of amorphous Si3N4, but
trace amounts of hydrogen-, oxygen-, and nitrogen-containing moieties were found which contributed to the displacement of the Si-N absorption. The associated functional groups were identified as Si-H, NH, SiOx, and Si-O-Nx. IR was used to measure quantitatively the hydrogen-containing
impurities. The method provides a means of identifying and correlating impurity levels with properties of the films.
Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
Publication date: March 1, 1984
More about this publication?
The Society publishes the internationally recognized, peer reviewed journal, Applied Spectroscopy, which is available both in print and online. Subscriptions are included with membership or can be purchased by institutional or corporate organizations. Abstracts may be viewed free of charge. Previously published as Bulletin (Society for Applied Spectroscopy)