Skip to main content

Carbon Measurement in Thin Silicon Wafers (∼400 μm) by Infrared Absorption Spectrometry

Buy Article:

$29.00 plus tax (Refund Policy)

Abstract:

An original method is developed to determine the carbon content in industrial samples (thin silicon wafers double-side polished) through IR spectrometry. This method permits to remove interference fringes in the infrared spectra by using the properties of Brewster incidence.

Keywords: Carbon; Infrared; Silicon

Document Type: Research Article

DOI: http://dx.doi.org/10.1366/0003702824638890

Affiliations: IBM France, Essonne Plant, 224 Boulevard John Kennedy, 91102 Corbeil-Essonnes, Essonnes, France

Publication date: March 1, 1982

More about this publication?
sas/sas/1982/00000036/00000002/art00014
dcterms_title,dcterms_description,pub_keyword
6
5
20
40
5

Access Key

Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content
Cookie Policy
X
Cookie Policy
ingentaconnect website makes use of cookies so as to keep track of data that you have filled in. I am Happy with this Find out more