Carbon Measurement in Thin Silicon Wafers (∼400 μm) by Infrared Absorption Spectrometry

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An original method is developed to determine the carbon content in industrial samples (thin silicon wafers double-side polished) through IR spectrometry. This method permits to remove interference fringes in the infrared spectra by using the properties of Brewster incidence.

Keywords: Carbon; Infrared; Silicon

Document Type: Research Article


Affiliations: IBM France, Essonne Plant, 224 Boulevard John Kennedy, 91102 Corbeil-Essonnes, Essonnes, France

Publication date: March 1, 1982

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