Tertiary Interferograms in Fourier Transform Spectroscopy

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Abstract:

Multiple passes, both within a semiconductor specimen and between the specimen surface and the interferometer, give rise to a series of extraneous "tertiary" interferograms in a Fourier transform spectrophotometer. These tertiary interferograms can lead to a possible error on the order of 1% in the measurement of the impurity content of a silicon wafer. However, this effect can be eliminated by a straightforward manipulation of the interferogram prior to transformation.

Keywords: FT-IR; Infrared; Interferograms, tertiary; Methods, analytic; Silicon; Techniques, spectroscopic

Document Type: Research Article

DOI: http://dx.doi.org/10.1366/0003702814732265

Affiliations: Electron Devices Division, National Bureau of Standards, Washington, DC 20234

Publication date: September 1, 1981

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