Multiple passes, both within a semiconductor specimen and between the specimen surface and the interferometer, give rise to a series of extraneous "tertiary" interferograms in a Fourier transform spectrophotometer. These tertiary interferograms can lead to a possible error on the order
of 1% in the measurement of the impurity content of a silicon wafer. However, this effect can be eliminated by a straightforward manipulation of the interferogram prior to transformation.
Electron Devices Division, National Bureau of Standards, Washington, DC 20234
Publication date: September 1, 1981
More about this publication?
The Society publishes the internationally recognized, peer reviewed journal, Applied Spectroscopy, which is available both in print and online. Subscriptions are included with membership or can be purchased by institutional or corporate organizations. Abstracts may be viewed free of charge. Previously published as Bulletin (Society for Applied Spectroscopy)