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Electronic Raman Spectroscopy of Rare Earth Doped Yttrium Aluminum Garnet Layers Grown by Liquid Phase Epitaxy

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Abstract:

Thin films of garnet grown by liquid phase epitaxy have been studied by means of the electronic Raman effect. It is shown that films of moderate thickness (about 10 to 20 μm) can be measured directly, without using difficult lightguiding techniques. The method has been applied successfully to the study of electronic Raman transitions of the Tb3+ ion in yttrium aluminium garnet. In this way two transitions were measured in the ground state 7F6 and seven transitions between the ground state 7F6 and the first excited state 7F5. From these results, it is concluded that in crystalline films of yttrium aluminium garnet, terbium substitutes for yttrium in the same way as it does in single crystals.

Keywords: Crystal; Garnet; Raman; Terbium

Document Type: Research Article

DOI: http://dx.doi.org/10.1366/0003702804731041

Affiliations: Philips Research Laboratories, Eindhoven, The Netherlands

Publication date: November 1, 1980

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