Low Temperature Evaluation of Carbon and Oxygen Contaminants in Silicon

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Abstract:

Low temperature Fourier transform infrared measurements at 20 K on some wafers containing substitutional atomic carbon and oxygen are presented. Spectral subtraction techniques at 20 K indicate an increase of approximately 5 times in sensitivity compared to the room temperature evaluation of the carbon and oxygen concentrations.

Keywords: Infrared

Document Type: Research Article

DOI: http://dx.doi.org/10.1366/0003702804730754

Affiliations: Nicolet Instrument Corporation, Madison, Wisconsin 53711

Publication date: March 1, 1980

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