Evaluation of Carbon and Oxygen Content of Silicon Wafers Using Infrared Absorption

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Room temperature Fourier transform infrared measurements on some contaminated silicon wafers are presented. Use of subtractive techniques readily allows both carbon and oxygen concentrations of about 0.1 ppm atomic to be obtained in relatively short measurement times (about 1 min), providing an adequate "pure" wafer is used as the reference standard.

Keywords: Infrared

Document Type: Research Article

DOI: http://dx.doi.org/10.1366/0003702804730574

Affiliations: Nicolet Instrument Corporation, Madison, Wisconsin 53711

Publication date: March 1, 1980

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