Evaluation of Carbon and Oxygen Content of Silicon Wafers Using Infrared Absorption
Abstract:Room temperature Fourier transform infrared measurements on some contaminated silicon wafers are presented. Use of subtractive techniques readily allows both carbon and oxygen concentrations of about 0.1 ppm atomic to be obtained in relatively short measurement times (about 1 min), providing an adequate "pure" wafer is used as the reference standard.
Document Type: Research Article
Affiliations: Nicolet Instrument Corporation, Madison, Wisconsin 53711
Publication date: March 1, 1980
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