Optical Spectroscopy Applied to the Study of Plasma Etching

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The use of an optical spectrographic system in the study of a CF3H plasma process has been investigated. CF3H plasma etch rates of SiO2 are related to emission intensities of spectral lines of compounds identified in the plasma. HF is a definite component when SiO2 is etched with a CF3H plasma. This optical spectrographic system has the potential to control and eventually automate both plasma etch and deposition processes.

Keywords: Applied spectroscopy; Emission spectroscopy; Low-temperature plasma analysis; Plasma diagnostics instrumentation

Document Type: Research Article

DOI: http://dx.doi.org/10.1366/0003702804730907

Affiliations: IBM Data Systems Division, East Fishkill, Hopewell Junction, New York 12533

Publication date: January 1, 1980

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