Optical Spectroscopy Applied to the Study of Plasma Etching

Authors: Frieser, R.G.; Nogay, J.

Source: Applied Spectroscopy, Volume 34, Issue 1, Pages 1-97 (January/February 1980) , pp. 31-33(3)

Publisher: Society for Applied Spectroscopy

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Abstract:

The use of an optical spectrographic system in the study of a CF₃H plasma process has been investigated. CF₃H plasma etch rates of SiO₂ are related to emission intensities of spectral lines of compounds identified in the plasma. HF is a definite component when SiO₂ is etched with a CF₃H plasma. This optical spectrographic system has the potential to control and eventually automate both plasma etch and deposition processes.

Keywords: Applied spectroscopy; Emission spectroscopy; Low-temperature plasma analysis; Plasma diagnostics instrumentation

Document Type: Research article

DOI: http://dx.doi.org/10.1366/0003702804730907

Affiliations: 1: IBM Data Systems Division, East Fishkill, Hopewell Junction, New York 12533

Publication date: 1980-01-01

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