Reduction in Raman Intensities of Si+O Defect Bands in Quartz Glass by Thermal Treatment

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Abstract:

In undoped quartz glass (e.g., Suprasil W 1) defects of the type Si+O are found, presumably caused by breaks in Si—O bonds. The Raman bands at 490 and 600 cm−1 are correlated to these defects, as shown by Bates et al. by irradiation of quartz glass with neutrons. With increasing irradiation the intensity of the bands at 490 and 600 cm−1 increased, as well. At 2 × 1020 neutrons/cm2 the band 600 cm−1 increased by a factor of 7.3 compared to the sample without irradiation. Interpretation of this increase as caused by an increase in the number of Si+O defects is supported by results from x-ray small angle scattering. On the other hand, Walrafen reports a decrease in the intensities of the 490 and 600 cm−1 bands by doping SiO2 glass with GeO2 or B2O3 as well as a small decrease of these bands with increasing content of OH. These facts are explained by interaction of the dopants with the Si+O defects.

Keywords: Raman spectroscopy

Document Type: Short Communication

DOI: http://dx.doi.org/10.1366/000370278774330757

Affiliations: Institut für Experimentalphysik der Universität Graz, Austria and Forschungslaboratorien der Siemens AG. München, Germany

Publication date: November 1, 1978

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