The difficulties of nonuniform ion etching which hamper depth profiling by X-ray photoelectron spectroscopy (XPS) have been overcome by use of a mechanically scanned saddle-field ion source. The system and its calibration for uniformity are described, and its performance is illustrated
by the depth profile of a Si3N4/SiO2/Si metal nitride oxide silicon device. This also allows the potential advantages of XPS profiling over Auger electron spectroscopy profiling to be discussed.
ICI Ltd., Mond Division, Runcorn, Cheshire, England 2:
Corporate Laboratory, Runcorn, Cheshire, England 3:
Ion Tech Ltd., 2 Park Street, Teddington, Middlesex, England
Publication date: March 1, 1978
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The Society publishes the internationally recognized, peer reviewed journal, Applied Spectroscopy, which is available both in print and online. Subscriptions are included with membership or can be purchased by institutional or corporate organizations. Abstracts may be viewed free of charge. Previously published as Bulletin (Society for Applied Spectroscopy)