Uniform Depth Profiling in X-ray Photoelectron Spectroscopy (Electron Spectroscopy for Chemical Analysis)

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Abstract:

The difficulties of nonuniform ion etching which hamper depth profiling by X-ray photoelectron spectroscopy (XPS) have been overcome by use of a mechanically scanned saddle-field ion source. The system and its calibration for uniformity are described, and its performance is illustrated by the depth profile of a Si3N4/SiO2/Si metal nitride oxide silicon device. This also allows the potential advantages of XPS profiling over Auger electron spectroscopy profiling to be discussed.

Keywords: XPS (ESCA)

Document Type: Research Article

DOI: http://dx.doi.org/10.1366/000370278774331468

Affiliations: 1: ICI Ltd., Mond Division, Runcorn, Cheshire, England 2: Corporate Laboratory, Runcorn, Cheshire, England 3: Ion Tech Ltd., 2 Park Street, Teddington, Middlesex, England

Publication date: March 1, 1978

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