Spectroscopic Study of Radiofrequency Oxygen Plasma Stripping of Negative Photoresists. II. Visible Spectrum

Authors: Griffiths, J. E.; Degenkolb, E. O.

Source: Applied Spectroscopy, Volume 31, Issue 2, Pages 87-179 (March/April 1977) , pp. 134-137(4)

Publisher: Society for Applied Spectroscopy

Buy & download fulltext article:


Price: $29.00 plus tax (Refund Policy)


The rf O2 plasma-induced stripping of negative photoresists from semiconductor surfaces has been detected and monitored using the optical emission from electronically excited CO product molecules at 483.5 and 519.8 nm. The active species producing the stripping has been identified as electronically excited oxygen atoms. The end point of the stripping process is easily identified as is the final cleanup of the semiconductor surface. The dependence of the stripping time as a function of flow rate and oxygen pressure has also been determined.

Keywords: Emission spectroscopy; Flame spectroscopy; Surface analysis

Document Type: Research Article

DOI: http://dx.doi.org/10.1366/000370277774463995

Affiliations: Bell Laboratories, Murray Hill, New Jersey 07974

Publication date: March 1, 1977

More about this publication?
Related content



Free Content
Free content
New Content
New content
Open Access Content
Open access content
Subscribed Content
Subscribed content
Free Trial Content
Free trial content

Text size:

A | A | A | A
Share this item with others: These icons link to social bookmarking sites where readers can share and discover new web pages. print icon Print this page