Spectrographic Analysis of Tantalum and Tantalum Oxide

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Tantalum metal is analyzed for 12 impurity elements by using a carrier distillation technique with a dc arc. The metal is oxidized in a muffle oven at 900°C. The oxide is mixed with a special carrier made of silver metal, silver chloride, and barium fluoride. A set of standards is included on each plate, and the analytical curves are linear for the concentration range used. The coefficient of variation varies from 3 0 to 8 7%.

Document Type: Research Article

DOI: http://dx.doi.org/10.1366/000370263789620872

Affiliations: U. S. Industrial Chemicals Company, Cincinnati, Ohio

Publication date: November 1, 1963

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