Electron-Beam-Induced-Current Investigation of GaN/AlGaN/Si Heterostructures Using Scanning Transmission Electron Microscopy
Authors: Tanaka, Shigeyasu; Aoyama, Kentaro; Ichihashi, Mikio; Arai, Shigeo; Honda, Yoshio; Sawaki, Nobuhiko
Source: Journal of Electron Microscopy, Volume 56, Number 4, August 2007 , pp. 141-144(4)
Publisher: Oxford University Press
Abstract:An electron-beam-induced-current technique has been applied to scanning transmission electron microscopy to characterize GaN/AlGaN/n-Si heterostructures. The structure was formed by metalorganic vapor phase epitaxy using AlGaN as an intermediate layer. Two samples with nominal intermediate layer thicknesses of 60 and 120 nm were studied. It was found that there is a junction in the n-type Si region underneath the nitride/Si interface irrespective of the intermediate layer thickness, whereas induced current occurred neither in the nitride region nor at the nitride/Si interface. The junction formed was found to be undulated. The sample with the thin intermediate layer had undulations of a shorter periodicity than that with the thick intermediate layer. The formation of the junction is attributed to the diffusion of Al during the nitride growth.
Document Type: Research Article
Publication date: 2007-08-01
- The Journal of Electron Microscopy is the official journal of the Japanese Society of Microscopy, the second largest society of microscopy in the world. The journal is an international forum, open to all scientists in the field, for publishing the best research in advanced electron microscopy and new scanning probe microscopy. To ensure this policy, the journal has appointed eminent scientists from around the world to be Regional Editors. The Journal of Electron Microscopy publishes six issues a year, and papers cover the application of advanced microscopy in diverse fields. Articles cover theories, methods, techniques, and instrumentation, as well as their applications to life and material sciences.