Effect of sputtering time on physical and electrical properties of ZrO
x thin film on Si
Purpose ‐ The purpose of this paper is to report the effect of sputtering time on the electrical and physical properties of ZrO
x. ZrO x (measured thickness is ranging from 20.5 to 51.3?nm) thin films as gate oxide materials
are formed by metal deposition at different sputtering time and thermal oxidation techniques. Design/methodology/approach ‐ Zirconium is deposited on silicon substrate at three different sputtering time; 30-, 60- and 120-s continued with an oxidation process conducted
at 500°C for 15?min to form ZrO x thin films. High-resolution X-ray diffraction (HR-XRD), Fourier transform infrared (FTIR) spectroscopy and electrical characterizations were used to examine the properties of the thin film. Findings ‐ A broad
ZrO x peak lies in between 26° and 31° from HR-XRD is presumed as the effect of small thickness of ZrO x and or the ZrO x is still partially crystalline. FTIR spectroscopy results suggested that besides ZrO x,
SiO x interfacial layer (IL) has also formed in all of the investigated samples. As the sputtering time increases, hysteresis between the forward and reverse bias of capacitance-voltage curve has reduced. The lowest leakage current density and the highest oxide breakdown
voltage have been demonstrated by 60-s sputtered sample. These may be attributed to a lower effective oxide charge and interface trap density. The extracted dielectric constant (?) of these oxides is ranging from 9.4 to 18, in which the ? value increases with the increase in sputtering time.
Originality/value ‐ ZrO x thin film which was fabricated by sputtering method at different sputtering time and thermal oxidation techniques showed distinctive electrical results. SiO x IL formed in the samples.
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