COMPEL: Int J for Computation and Maths. in Electrical and Electronic Eng.

Simulation of the hydrodynamic model of semiconductor devices by a finite element method
pp. 4-21(18)
Authors: Fortin, Michel; Yang, Geng

A theoretical study of charge iteration
pp. 22-46(25)
Authors: Aiello, G; Alfonzetti, S; Coco, S; Salerno, N

Noise parameters of HEMTs: analysis of their properties from a circuit model approach
pp. 47-57(11)
Authors: Caddemi, A; Sannino, M

Simulation of electron states in quantum wires with mixed finite elements
pp. 58-69(12)
Authors: Lepaul, S; Bouillault, F; Lustrac, A De

Direct finite element solution for the capacitance, conductance or inductance, and force in linear electrostatic and magnetostatic problems
pp. 70-84(15)
Author: Spink, D.M.