Thin film silicon substrate formation using electrochemical anodic etching method
Authors: Kwon, J.-H.1; Lee, S.-H.2; Ju, B.-K.3
Source: Surface Engineering, Volume 25, Number 8, November 2009 , pp. 603-605(3)
Publisher: Maney Publishing
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Abstract:
The production of detached porous silicon (PS) layers for layer transfer (LT) has been investigated. Electrochemical anodisation (ECA) studies of monocrystalline silicon (mono-Si) wafers in a hydrofluoric acid/ethanol/deionised (DI) water solution showed that porosity can be controlled by controlling current density during ECA. Double layered PS layers consisting of low (26·5%) and high (86·3%) porosity layers were formed by ECA at 1·5 mA cm-2 and 100 mA cm-2 for etching times of 10 min and 10 sec respectively. These PS layers are considered viable for LT substrate technology.Keywords: POROUS SILICON; ELECTROCHEMICAL ETCHING; ANODISATION; LAYER TRANSFER
Document Type: Research article
DOI: 10.1179/174329408X326849
Affiliations: 1: Display and Nanosystem Laborotory, College of Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul 136-701, Korea 2: Strategic Energy Research Institute, Sejong University, 98 Kunja-Dong, Kwangin-Gu Seoul 143-747, Korea 3: School of Electrical Engineering, College of Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul 136-701, Korea;, Email: bkju@korea.ac.kr
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