Preparation of NiO_x thin films on SnO₂ : F for electrochromic applications

Authors: Jiménez-González, A.E.; Cambray, J.G.; Gutiérrez, A.A.R.

Source: Surface Engineering, Volume 16, Number 1, February 2000 , pp. 77-79(3)

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Abstract:

By combining the electrochemical and sol–gel deposition methods it was possible to prepare the heterojunction NiO_x -SnO₂ : F. High quality SnO₂ : F thin films were prepared by the sol–gel technique on glass substrates. These films are very transparent in the visible region, with optical transmittance >85%, and have conductivity around 230 ?_-1 cm_-1. By using electrochemical deposition it was possible to grow NiO_x thin films on SnO₂ : F coated glass substrates. Optical and electrical properties of the NiO_x -SnO₂ : F interface are detailed in the present study. Cyclic voltammetry measurements of NiO_x thin films deposited on SnO₂ : F show clearly the reversible movement of electrons, protons, and positive ions into the electrochromic NiO_x film. With such results, the NiO_x -SnO₂ : F interface shows potential for application in electrochromic devices.

Document Type: Regular Paper

DOI: http://dx.doi.org/10.1179/026708400322911582

Affiliations: The Energy Research Centre, UNAM, 62580 Temixco, Morelos, Mexico

Publication date: 2000-02-01

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