Preparation of NiOx thin films on SnO2 : F for electrochromic applications
Authors: Jiménez-González, A.E.; Cambray, J.G.; Gutiérrez, A.A.R.
Source: Surface Engineering, Volume 16, Number 1, February 2000 , pp. 77-79(3)
Publisher: Maney Publishing
Abstract:By combining the electrochemical and sol–gel deposition methods it was possible to prepare the heterojunction NiOx -SnO2 : F. High quality SnO2 : F thin films were prepared by the sol–gel technique on glass substrates. These films are very transparent in the visible region, with optical transmittance >85%, and have conductivity around 230 ?-1 cm-1. By using electrochemical deposition it was possible to grow NiOx thin films on SnO2 : F coated glass substrates. Optical and electrical properties of the NiOx -SnO2 : F interface are detailed in the present study. Cyclic voltammetry measurements of NiOx thin films deposited on SnO2 : F show clearly the reversible movement of electrons, protons, and positive ions into the electrochromic NiOx film. With such results, the NiOx -SnO2 : F interface shows potential for application in electrochromic devices.
Document Type: Regular Paper
Affiliations: The Energy Research Centre, UNAM, 62580 Temixco, Morelos, Mexico
Publication date: 2000-02-01
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