Direct determination of the initial thermal evolution behaviour of the platelet defects in hydrogen implanted silicon wafers

Authors: Xiao, Q.; Tu, H.

Source: Materials Science and Technology, Volume 21, Number 6, June 2005 , pp. 739-742(4)

Buy & download fulltext article:

Price: $48.00 plus tax (Refund Policy)

Abstract:

Direct information about initial thermal evolution behaviour of the platelet defects in hydrogen implanted silicon wafers is retained in annealed samples as thin as transmission electron microscopic (TEM) foil and can then be observed using high resolution transmission electron microscopy (HRTEM). It has been found that platelet-like amorphous inclusion appears in the initial stage of the thermal evolution and, additionally, thermal evolution preferentially occurs around the defects of the comparatively larger sized platelets, the reasons for which are discussed. By using the channelling implantation method, the characteristic platelet size distribution was acquired and the crack position was further modified.

Keywords: HRTEM; PLATELET DEFECT; SILICON; THERMAL EVOLUTION; HYDROGEN ION IMPLANTATION

Document Type: Research Article

DOI: http://dx.doi.org/10.1179/174328405X43063

Publication date: 2005-06-01

More about this publication?

Authors wishing to cite fast track papers should give the journal name and the article DOI. This will enable reference linking via CrossRef and allow forward and backward citation tracking systems to associate the fast track citation with the final journal reference.
Materials Science and Technology is the successor of two previous titles, for which digitised archives are available: Metal Science (Vols. 1—17; 1967—84) and Metals Technology (Vols. 1—11; 1974—84).
Editorial Board
Information for Authors
Subscribe to this Title
Terms & Conditions
Online submission site
ingentaconnect is not responsible for the content or availability of external websites