Bismuth nanolines on Si(001) and their influence on mesoscopic surface structure

Authors: MacLeod, J.M.¹; Lima, C.P.²; Miwa, R.H.²; Srivastava, G.P.³; McLean, A.B.¹

Source: Materials Science and Technology, Volume 20, Number 8, August 2004 , pp. 951-954(4)

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Abstract:

Experimental studies of Bi heteroepitaxy on Si(001) have recently uncovered a self-organised nanoline motif which has no detectable width dispersion. The Bi lines can be grown with an aspect ratio that is greater than 350 : 1. This paper describes a study of the nanoline geometry and electronic structure using a combination of scanning tunneling microscopy (STM) and ab initio theoretical methods. In particular, the effect that the lines have on Si(001) surface structure at large length scales, l > 100 nm, is studied. It has been found that Bi line growth on surfaces that have regularly spaced single height steps results in a 'preferred' domain orientation.

Keywords: HETEROEPITAXY; GROWTH; NANOWIRES; BISMUTH

Document Type: Research Article

DOI: http://dx.doi.org/10.1179/026708304225019894

Affiliations: 1: Department of Physics, Queen's University, Kingston, Ontario, Canada 2: Faculdade de F�sica, Universidade Federal de Uberlăndia, CP 593, 38400-902,Uberlăndia, MG, Brazil 3: School of Physics, University of Exeter, Stocker Road, Exeter, EX4 4QL, UK

Publication date: 2004-08-01

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Bismuth nanolines on Si(001) and their influence on mesoscopic surface structure

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