Materials Science and Technology

Interfacial segregation of competitive impurities in embrittled and de-embrittled Fe-3%Ni
pp. 877-886(10)
Authors: Krajnikov, A.V.; Militzer, M.; Wieting, J.

Novel synthesis of MoSi₂ and MoSi₂-Al₂0₃ ultrafine powders
pp. 887-892(6)
Authors: Yu, C. C.; Jagasivamani, V.; Kumar, R.; Sudarshan, T. S.

Molecular dynamics simulations of ion bombardment processes
pp. 893-896(4)
Authors: Marqués, L. A.; Jaraíz, M.; Rubio, J. E.; Vicente, J.; Bailón, L. A.; Barbolla, J.

Process model for two step age hardening of 7475 aluminium alloy
pp. 897-904(8)
Authors: Poole, W. J.; Shercliff, H. R.; Castillo, T.

Effect of natural aging and preaging on subsequent precipitation process of an AI-Mg-Si alloy with high excess silicon
pp. 905-911(7)
Authors: Zhen, L.; Kang, S. B.; Kim, H. W.

Formation of MgAI₂O₄ at interface between a squeeze cast piston alloy and Saffil fibre reinforcement
pp. 912-917(6)
Authors: Papworth, A.; Fox, P.

Effect of interfacial reaction on fracture behaviour of aluminium borate whisker reinforced aluminium composite
pp. 918-922(5)
Authors: Fei, W. D.; Jiang, X. D.; Li, C.; Yao, C. K.

Superplastic behaviour of powder metallurgy 1.3%C-1.6%Cr-0.8%B steel
pp. 923-927(5)
Authors: Acosta, P.; Jiménez, J. A.; Frommeyer, G.; Ruano, O. A.

Dry sliding wear response of zinc based alloy: influence of heat treatment, sliding speed, and pressure
pp. 928-936(9)
Author: Prasad, B. K.

Mass transfer and morphological changes in AISI 316 stainless steel in high temperature flowing sodium
pp. 937-944(8)
Authors: Pillai, S. Rajendran; Khatak, H. S.; Gnanamoorthy, J. B.; Velmurugan, S.; Tyagi, A. K.; Kale, R. D.; Swaminathan, K.; Rajan, M.; Rajan, K. K.

Electronic properties of defects introduced in GaAs during sputter deposition of gold Schottky contacts
pp. 945-948(4)
Authors: Auret, F. D.; Goodman, S. A.; Leclerc, Y.; Myburg, G.; Schutte, C.

Optical and electrical non-uniformity around dislocations in silicon doped GaAs
pp. 949-953(5)
Authors: Tajima, M.; Toba, R.; Ishida, N.; Warashina, M.

Neutron transmutation doping of III-VI layered semiconductors
pp. 954-956(3)
Authors: Marí, B.; Fenollosa, R.; Manjón, F. J.; Clemente, R.; Muñoz, V.; Segura, A.

Anisotropic distribution of crystalline defects along [011] and [011] directions in In_0.52AI_0.48As buffer layers grown on InP
pp. 957-960(4)
Authors: Peiró, F.; Cornet, A.; Morante, J. R.

Photoreflectance characterisation of Ar + ion etched and SiCI₄ reactive ion etched silicon (100)
pp. 961-964(4)
Authors: Murtagh, M.; Lynch, S. M.; Kelly, P. V.; Hildebrandt, S.; Herbert, P. A. F.; Jeynes, C.; Crean, G. M.

Porous silicon for microelectronics and optoelectronics
pp. 965-970(6)
Authors: Hérino, R.

Deep trap characterisation and conduction band offset determination of AI_0.48In_0.52As/(Ga_0.7AI_0.3)_0.48In_0.52As heterostructures
pp. 971-973(3)
Authors: Ducroquet, F.; Jacovetti, G.; Rezzoug, K.; Ababou, S.; Guillot, G.; Praseuth, J. P.; Olivier-Martin, F.; Giraudet, L.

`Carbon nanotubes'
pp. 974-974(1)
Authors: Harris, Peter; Allen, K. W.