Growth and characterisation of SiC films deposited on a-SiO₂/Si (100) substrates

Authors: Rodrŕguez-Viejo, J.; Clavaguera, N.; EI Felk, Z.; Clavaguera-Mora, M. T.; Arnaud, G.; Camassel, J.; Pascual, J.; Berberich, S.; Millán, J.

Source: Materials Science and Technology, Volume 12, Number 1, January 1996 , pp. 98-102(5)

Publisher: Maney Publishing

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Abstract:

The growth of polycrystalline SiC films has been carried out by low pressure chemical vapour deposition in a horizontal quartz reaction chamber using tetramethylsilane and H2 as the precursor gas mixture. Silicon (100) wafers were used as substrates. A thin Si O₂ amorphous layer of ~6 nm was formed before SiC deposition to reduce the strain induced by the 8% difference in thermal expansion coefficients between SiC and Si. Samples were. analysed by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and infrared reflectivity. The structure of films grown at temperatures between 950 and 1150°C varies from amorphous to polycrystalline SiC. Preferential [111] orientation and columnar growth of polycrystalline films develops with increasing temperature.

MST/3317

Document Type: Research Article

Publication date: 1996-01-01

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