Analytical electron microscopy of Si1−xGex/Si heterostructures and local isolation structures
Authors: Armigliato, A.; Balboni, R.; Corticelli, F.; Frabboni, S.; Malvezzi, F.; Vanhellemont, J.
Source: Materials Science and Technology, Volume 11, Number 4, April 1995 , pp. 400-406(7)
Publisher: Maney Publishing
Abstract:The convergent beam electron diffraction (CBED) technique has been applied to determine the lattice strain in Si1−xGex/Si heterostructures and in local isolation structures. Both plan and cross-sections have been investigated by transmission electron microscopy. In the heterostructures, the strain value obtained by CBED along the growth direction CRED is affected by a relaxation induced by the thinning process in a direction normal to the cross-section plane, being generally smaller than the bulk tetragonal value T This effect can be overcome using the large angle CBED technique on plan sections. In addition, in the heterostructures the Ge concentration has been determined by energy dispersive X-ray spectrometry, allowing the pseudomorphicity of the samples to be evaluated. All the values of strain and Ge concentration thus obtained are in good agreement with those deduced from Rutherford backscattering spectrometry. In isolation structures, the CBED technique has been applied to determine the distribution of the components of the strain tensor along a line parallel to the pad oxide/substrate interface. The values obtained are in agreement with the predictions of a previously reported simple model.
Document Type: Research Article
Publication date: 1995-04-01
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