Preparation of silicon quantum dot nanoparticles using free standing porous silicon as base material

Authors: Yusop, S F M; Rusop, M; Abdullah, S

Source: Materials Research Innovations, Volume 15, Supplement 2, August 2011 , pp. s210-s212(3)

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Abstract:

Luminescent silicon quantum dot nanoparticles (SQDNs) have been prepared by photoelectrochemical etching process to produce free standing porous silicon. Following this, the thermomechanical process was used to prepare SQDNs from free standing porous silicon. The samples obtained were characterised using field emission scanning electron microscopy, PL?Raman spectroscopy and Brunauer?Emmett?Teller sorptometry. Structural analysis by field emission scanning electron microscopy revealed the diameter size of SQDNs between 6 and 10 nm, while the Brunauer?Emmett?Teller analysis gave a specific surface area and pore diameter of SQDNs. The PL measurement showed a broad spectrum located at 600?700 nm. A very asymmetric Raman peak is shifted near 500 cm^?1, which is due to the reduction in nanocrystal size.

Keywords: Silicon; PL?Raman; Quantum dots; Free standing porous silicon; FESEM

Document Type: Original Article

DOI: http://dx.doi.org/10.1179/143307511X13031890749217

Publication date: 2011-08-01

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