Analysis and simulation of carriers statistic for semiconducting single wall carbon nanotube
Authors: Karamdel, J.1; Ahmadi, M.T.2; Damghanian, M.3; Majlis, B.Y.3; Dee, C.F.3; Ismail, R.2
Source: Materials Research Innovations, Volume 13, Number 3, September 2009 , pp. 211-213(3)
Publisher: Maney Publishing
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Abstract:
In scaling down to 10 nm, the electron transportation is predominantly ballistic. Moreover, in most of the doped nanoscale devices, the carrier density is in the degenerate regime. In these cases the failure of Boltzmann statistic has led the research to new explanations. In this paper the authors formulate and simulate the carrier concentration in a semiconducting single wall carbon nanotube using the Fermi-Dirac distribution function. It was shown that the band structure of semiconducting single wall carbon nanotube nearby the minimum energy is parabolic and density of state is proportional to the Fermi-Dirac distribution. In the non-degenerate regime, Fermi energy is a weak logarithmic function of carrier concentration and varies linearly with temperature, but for strongly degenerate statistics, the Fermi energy is a strong function of carrier concentration and is independent of temperature.Keywords: CARRIER STATISTIC; BAND STRUCTURE; CNT
Document Type: Research article
DOI: 10.1179/143307509X440325
Affiliations: 1: Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, 43600 Bangi-Selangor, Malaysia;, Email: jkaramdel@yahoo.com 2: Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai Johor Bahru, Malaysia 3: Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, 43600 Bangi-Selangor, Malaysia
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