Influence of growth temperature on SnO₂ nanowires

Authors: Tiong, T.Y.¹; Yahaya, M.²; Dee, C.F.³; Lim, K.P.⁴; Majlis, B. Yeop³; Sow, C.H.⁵

Source: Materials Research Innovations, Volume 13, Number 3, September 2009 , pp. 203-206(4)

Publisher: Maney Publishing

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Abstract:

Tin oxide (SnO₂) nanowires have been synthesised using a thermal evaporation approach on quartz (SiO₂) substrates in nitrogen atmosphere with a mixture of milled SnO₂ powder and graphite as reactants. The substrates were placed vertically right above the reactants during the growth at 850, 900, 950 and 1000°C. A SnO₂ thin film layer has been used as the nucleation site which is different from the conventional methods of using metal catalyst as seed for growth. SnO₂ thin films have self-catalysed to form SnO₂ nanowires at 950°C. At 850 and 900°C, plenty of SnO₂ clusters landed on the substrates which were originated from the non-vaporised SnO₂ powder. An optimum range of temperature was obtained for growth of clean SnO₂ nanowires which were free from metal catalysts and non-vaporised SnO₂ clusters.

Keywords: TIN OXIDE; NANOWIRES; GROWTH TEMPERATURE; MORPHOLOGIES

Document Type: Research article

DOI: 10.1179/143307509X437626

Affiliations: 1: School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, Bangi, Malaysia;, Email: t_yawt05@yahoo.com 2: School of Applied Physics, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, Bangi, Malaysia 3: Institute of Microengineering and Nanotechnology, Universiti Kebangsaan Malaysia, Bangi, Malaysia 4: Department of Physics, Faculty of Science, Universiti Putra Malaysia, Serdang, Malaysia 5: Department of Physics, Faculty of Science, National University of Singapore, Singapore