IngentaConnect Low temperature growth of Si nanowires via vapourliquidsolid mech...

Authors: Ng, I.K.¹; Suzuki, H.²

Source: Materials Research Innovations, Volume 13, Number 3, September 2009 , pp. 192-195(4)

Abstract:

A set of Si nanowires (NWs) was synthesised by chemical vapour deposition using Si supported Au nanoclusters as catalyst and disilane reactant in hydrogen as the vapour phase precursor. The growth temperature and pressure were systematically varied to achieve various growth stages in order to study the effects of growth conditions on the morphology and microstructure of the NWs. The microstructure, morphology, crystallography and chemistry of the NWs were characterised using various imaging, diffraction and probe based techniques. Long NWs of high aspect ratios, good crystallinity and morphology were generally obtained at relatively low growth temperature and moderate growth pressure of 400°C and 1·0 torr respectively. The wires were several micormetres long with an average diameter range of approximately 10 to 30 nm. Higher growth pressures tend to promote branching and kinking. The vapour-liquid-solid growth mechanism is discussed in the context of the experimental conditions used here.

Keywords: SI NANOWIRES; VAPOUR-LIQUID-SOLID; CHEMICAL VAPOUR DEPOSITION

Document Type: Research article

DOI: 10.1179/143307509X437590

Affiliations: 1: Malaysian Nuclear Agency, Bangi, 43000 Kajang, Selangor, Malaysia;, Email: ikn1000@nuclearmalaysia.gov.my 2: National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305 0047, Japan

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Low temperature growth of Si nanowires via vapour-liquid-solid mechanism