Study of zirconium dioxide (ZrO₂) dielectric charges

Author: Zoolfakar, A.S.¹

Source: Materials Research Innovations, Volume 13, Number 3, September 2009 , pp. 161-164(4)

Publisher: Maney Publishing

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Abstract:

Silicon dioxide approached death end lifetime <1·0 nm thickness. Therefore, further scaling of metal oxide semiconductor devices required new oxide films (high-k) that are able to overcome the problems associated with gate leakage current, threshold shift, associated device power consumption and reliability. In this paper, zirconium dioxide (ZrO₂) one of the promising high-k dielectric films is studied. Capacitance voltage measurements were carried out to investigate properties such as oxide charges and interface trap charges that exist in the dielectric. In addition, post metal annealing using forming gas at 380°C was conducted on the metal oxide semiconductor capacitors for better understanding of the dielectric charge properties. It was concluded that the zirconium dioxide has low oxide and interface charges. The reduction of oxide and interface charges by annealing is possible provided that the time taken for the annealing process is well controlled.

Keywords: ZIRCONIUM DIOXIDE; PRECURSORS; OXIDE CHARGES; MOBILE IONIC CHARGES; FIXED OXIDE CHARGES; OXIDE TRAPPED CHARGES; DENSITY OF STATES

Document Type: Research article

DOI: 10.1179/143307509X437509

Affiliations: 1: Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Malaysia;, Email: ahmad074@salam.uitm.edu.my

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