Authors: Habibi, S.¹; Abdullah, H.²; Ariyanto, N. P.²; Tasirin, S. M.³; Yaakob, Z.³; Dee, C. F.⁴

Source: Materials Research Innovations, Volume 13, Number 3, September 2009 , pp. 142-144(3)

Publisher: Maney Publishing

Abstract:

Al doped ZnO (Al_xZn_1–xO) thin films have been prepared on quartz substrates by the sol–gel method using zinc acetate dehydrate, aluminium nitrate, stabilised by diethanolamine with different concentrations of dopant (x=0, 0·05, 0·10 and 0·15 wt-%). Al doped ZnO thin films were annealed at 400°C for 2 h in air. The structural property of the films has been evaluated using X-ray diffraction, which showed that the spectra are crystalline structure with the single phase ZnO hexagonal wurtzite. The SEM images show that the surface morphology of the samples is strongly dependent on the concentration of Al. The optical property has been determined using ultraviolet visible spectrometer. The calculated value of energy band gap was obtained by the analysis of ultraviolet visible. As concentration of Al increased, the energy band gap increased. The wider band gap is a significant requirement for antireflecting coating material.

Keywords: ANTIREFLECTION COATING; THIN FILMS; DOPED AL; ZNO

Document Type: Research Article

DOI: http://dx.doi.org/10.1179/143307509X437455

Affiliations: 1: Department of Electrical, Electronics and Systems Engineering, Faculty of Engineering and Built Environment, University of Kebangsaan Malaysia, 43600 Bangi Selangor, Malaysia;, Email: bibiey_saadah@yahoo.com 2: Department of Electrical, Electronics and Systems Engineering, Faculty of Engineering and Built Environment, University of Kebangsaan Malaysia, 43600 Bangi Selangor, Malaysia 3: Department of Chemical and Process Engineering, Faculty of Engineering and Built Environment, University of Kebangsaan Malaysia, 43600 Bangi Selangor, Malaysia 4: Institute of Microengineering and Nanoelectronics (IMEN), University of Kebangsaan Malaysia, 43600 Bangi Selangor, Malaysia

Publication date: 2009-09-01

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