Authors: Dee, C. F.¹; Lee, J. D.²; Sow, C. H.³; Majlis, B. Y.⁴; Hamzah, A.⁴; Abdullah, H.⁵; Lee, S.-K.⁶

Source: Materials Research Innovations, Volume 13, Number 3, September 2009 , pp. 135-138(4)

Publisher: Maney Publishing

Abstract:

Kinetic Monte Carlo method was used to simulate the deposition of ZnO thin film layers. For this simulation, parameters for atom absorption, desorption and surface diffusion were incorporated to perform more realistic model of deposition. A new approach was used where the diffusion process was integrated as part of the deposition process. Simulations were carried out at different substrate temperatures. Two- and three-dimensional growth mechanisms were simulated using this model. Surface roughness can be estimated from the ratio of the atoms at the edge of the islands to the total surface sites. The number of Zn and O adatoms on the surface as a time function was analysed.

Keywords: SURFACE ROUGHNESS; DEPOSITION; EPITAXIAL GROWTH; ZNO; SIMULATION; KINETIC MONTE CARLO

Document Type: Research Article

DOI: http://dx.doi.org/10.1179/143307509X437437

Affiliations: 1: Institute of Microengineering and Nanoelectronics (IMEN), University Kebangsaan Malaysia, Bangi, Malaysia;, Email: deechangfu@gmail.com 2: Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul, Korea 3: Department of Physics, Faculty of Science, National University of Singapore, Singapore 4: Institute of Microengineering and Nanoelectronics (IMEN), University Kebangsaan Malaysia, Bangi, Malaysia 5: Department of Electric, Electronic and Systems, Universiti Kebangsaan Malaysia, Bangi, Malaysia 6: Department of Semiconductor Science and Technology, Chonbuk National University, Jeonbuk, Korea

Publication date: 2009-09-01

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