Effects Of Annealing Condition On Orientation Of Bi3.2Nd0.8Ti3O12 Ferroelectric Film Prepared By Chemical Solution Deposition Process
Authors: He, Haiyan; Huang, Jianfeng; Cao, L.Y.
Source: Materials Research Innovations, Volume 10, Number 2, June 2006 , pp. 253-261(9)
Publisher: Maney Publishing
Abstract:Bi3.2Nd0.8Ti3O12 Ferroelectric thin film was successfully prepared on p-Si(111) substrate using chemical solution deposition process. The orientation and formation of thin film under different annealing condition were studied. XRD analysis indicated that (200)-oriented films with degree of orientation of I(200)/I(117)=2.097 and 0.466 were obtained by preannealing at 400 °C for 10 min followed by rapid thermal annealing at 700 °C for 3 min and 10 min, respectively, (008)-oriented film with degree of orientation of I(008)/I(117)=1.706 which decreased as increase of annealing time were obtained by rapid thermal annealing at 700 °C 3 min without preannealing, and (008)-oriented film with degree of orientation of I(008)/I(117)=0.719 were obtained by preheating the film from room temperature at 20 °C/min followed by annealing at 700 °C for 10 min. AFM analysis further indicated that preannealing at 400 °C for 10 min followed by rapid thermal annealing at 700 °C for 3 min resulted in formation of platelike crystallite parallel to substrate surface, however rapid thermal annealing at 700 °C 3 min without preannealing resulted in columnar crystallite perpendicular to substrate surface.
Document Type: Research Article
Publication date: 2006-06-01
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