Authors: Kim, H.W.; Kim, N.H.; Lee, C.

Source: British Ceramic Transactions, Volume 103, Number 4, August 2004 , pp. 187-189(3)

Publisher: Maney Publishing

Abstract:

An investigation has been made into the structural and optical properties of gallium oxide Ga₂O₃ films grown on Si(111) substrates by the metal organic chemical vapour deposition (MOCVD) technique, and annealed in the temperature range 750–1050°C. Post-deposition annealing of amorphous Ga₂O₃ was found to generate b phase grains. Photoluminescence spectra indicated that the annealed Ga₂O₃ films had a blue-green emission at 470 nm and an ultraviolet emission at 365 nm.

Keywords: POST-DEPOSITION ANNEALING; PHOTOLUMINESCENCE; GALLIUM OXIDE; METAL ORGANIC CHEMICAL VAPOUR DEPOSITION; THIN FILMS

Document Type: Research Article

DOI: http://dx.doi.org/10.1179/096797804225018741

Publication date: 2004-08-01

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