Short-circuited double Langmuir probe as a model of a conducting wafer under plasma processing

Authors: Aleksandrov, A.; Riaby, V.; Savinov, V.; Yakunin, V.

Source: Russian Microelectronics, Volume 34, Number 1, January 2005 , pp. 18-21(4)

Publisher: MAIK Nauka/Interperiodica

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Abstract:

The electromagnetic interaction is considered between a conducting wafer and a gas-discharge plasma under both dc and ac conditions, with emphasis on the collection of discharge current by the wafer. The mechanism is described whereby a silicon wafer behaves like an asymmetrical short-circuited double Langmuir probe. This model provides an understanding of how plasmas act on conducting parts of fabrication equipment.

Document Type: Research article

DOI: http://dx.doi.org/10.1007/s11180-005-0002-y

Affiliations: 1: Moscow State University, Moscow, Russia,

Publication date: 2005-01-01