Russian Microelectronics

Noncontact temperature measurement on dielectrics and semiconductors, part 2
pp. 1-17(17)
Authors: Bitukov, V.; Petrov, V.

Short-circuited double Langmuir probe as a model of a conducting wafer under plasma processing
pp. 18-21(4)
Authors: Aleksandrov, A.; Riaby, V.; Savinov, V.; Yakunin, V.

Parts screening for ESD susceptibility
pp. 22-29(8)
Authors: Gorlov, M.; Emel’yanov, V.; Rubtsevich, I.; Smirnov, D.

MBE growth of silicon films on diamond substrates
pp. 30-35(6)
Authors: Karasev, V.; Kryukov, V.; Kuznetsov, M.; Pintus, S.; Lamin, M.; Pchelyakov, O.; Sokolov, L.

Defect formation in epitaxial GaP junctions under heat treatment
pp. 36-42(7)
Authors: Boulyrskii, S.; Groushko, N.; Kazakov, D.

Combined effect of V₂O₅ and NH₃ on thermal oxidation of InP
pp. 43-46(4)
Authors: Mittova, I.; Lavrushina, S.; Sycheva, M.

Magnetic nanostructures and nanodevices with a semiconductor or dielectric spacer
pp. 47-53(7)
Authors: Kasatkin, S.; Murav’jev, A.; Plotnikova, N.; Pudonin, F.; Azhaeva, L.; Sergeeva, Z.; Khodzhaev, V.

MOS integrated piezoresistive microsensors
pp. 54-60(7)
Author: Dragunov, V.

Microprocessor structure in relation to on-chip interconnection characteristics
pp. 61-65(5)
Authors: Kristovskii, G.; Terent’ev, Yu.