Isotropic Plasma Etching of SiO2 Films

Authors: Kovalevskii A.A.; Malyshev V.S.; Tsybul'skii V.V.; Sorokin V.M.

Source: Russian Microelectronics, Volume 31, Number 5, September 2002 , pp. 290-294(5)

Publisher: MAIK Nauka/Interperiodica

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Abstract:

The isotropic etching of SiO₂ with an SF₆–O₂ plasma is studied experimentally. It is shown that the key factors in the process are the total and partial pressures of SF₆ and O₂ and the RF power. A smoothed-down edge profile of contact windows is obtained if SF₆ and O₂ are mixed in a ratio of 1 : 10 to 1 : 5. The maximum etch rate is achieved at total pressures of 250 to 450 Pa.

Language: English

Document Type: Research article

Affiliations: 1: Belarussian State University of Information Science and Electronics, Minsk, Belarus

Publication date: 2002-09-01