Diffusion of Nitrogen Atoms Implanted into Synthetic Diamonds

Authors: Cherepov E.I.1; Tishkovskii E.G.1; Obodnikov V.I.1; Pal'yanov Y.N.2; Sokol A.G.2

Source: Russian Microelectronics, Volume 31, Number 5, September 2002 , pp. 277-281(5)

Publisher: MAIK Nauka/Interperiodica

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Abstract:

The effect of isothermal annealing on the depth profiles of nitrogen atoms implanted into synthetic diamonds is studied by secondary-ion mass spectrometry. The annealing is performed under vacuum at 1400°C for 1, 5, or 20 h. It is found that the depth profile broadens on a macroscopic scale with annealing time. The broadening is successfully represented by a mathematical model of diffusion. The diffusion coefficient is roughly estimated at 2.3 × 10–15, 8.5 × 10–16, and 3.7 × 10–16 cm2/s for annealing times of 1, 5, and 20 h, respectively.

Language: English

Document Type: Research article

Affiliations: 1: Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, Russiaovi@thermo.isp.nsc.ru tish@thermo.isp.nsc.ru 2: Institute of Mineralogy and Petrography, Siberian Division, Russian Academy of Sciences, Novosibirsk, Russia

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