Diffusion of Nitrogen Atoms Implanted into Synthetic Diamonds

Authors: Cherepov E.I.¹; Tishkovskii E.G.¹; Obodnikov V.I.¹; Pal'yanov Y.N.²; Sokol A.G.²

Source: Russian Microelectronics, Volume 31, Number 5, September 2002 , pp. 277-281(5)

Publisher: MAIK Nauka/Interperiodica

Abstract:

The effect of isothermal annealing on the depth profiles of nitrogen atoms implanted into synthetic diamonds is studied by secondary-ion mass spectrometry. The annealing is performed under vacuum at 1400°C for 1, 5, or 20 h. It is found that the depth profile broadens on a macroscopic scale with annealing time. The broadening is successfully represented by a mathematical model of diffusion. The diffusion coefficient is roughly estimated at 2.3 × 10^–15, 8.5 × 10^–16, and 3.7 × 10^–16 cm²/s for annealing times of 1, 5, and 20 h, respectively.

Language: English

Document Type: Research article

Affiliations: 1: Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, Russiaovi@thermo.isp.nsc.ru tish@thermo.isp.nsc.ru 2: Institute of Mineralogy and Petrography, Siberian Division, Russian Academy of Sciences, Novosibirsk, Russia

Publication date: 2002-09-01

• In this: publication
• By this: publisher
• In this Subject: Electrical & Nuclear Engineering ,  Electricity & Magnetism
• By this author: Cherepov E.I. ;  Tishkovskii E.G. ;  Obodnikov V.I. ;  Pal'yanov Y.N. ;  Sokol A.G.

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