Russian Microelectronics

X-ray-Induced Irreversible Changes in the Structure and Electrical Properties of Cd1 – xZnxTe
pp. 271-276(6)
Authors: Pashaev E.M.; Peregudov V.N.; Yakunin S.N.; Zaitsev A.A.; Kolesnikova T.G.; Korovin A.P.

Diffusion of Nitrogen Atoms Implanted into Synthetic Diamonds
pp. 277-281(5)
Authors: Cherepov E.I.; Tishkovskii E.G.; Obodnikov V.I.; Pal'yanov Y.N.; Sokol A.G.

Polycrystalline-Silicon LPCVD by Propene-Assisted Silane Pyrolysis: A Study of the Process and the Films
pp. 282-289(8)
Authors: Erkov V.G.; Devyatova S.F.

Isotropic Plasma Etching of SiO2 Films
pp. 290-294(5)
Authors: Kovalevskii A.A.; Malyshev V.S.; Tsybul'skii V.V.; Sorokin V.M.

Annealing of Radiation and Electrostatic-Discharge Damages in Semiconductor Devices
pp. 295-304(10)
Authors: Gorlov M.I.; Litvinenko D.A.

Si3N4 SOI Structures Produced by Nitrogen Ion Implantation at High Energies and Beam Current Densities
pp. 305-309(5)
Authors: Komarov F.F.; Komarov A.F.; Petrov S.A.

Characterization of Selectively Doped InAs-Quantum-Dot GaAs-Based Multilayer Heterostructures by High-Resolution X-ray Diffraction
pp. 310-317(8)
Authors: Pashaev E.M.; Yakunin S.N.; Zaitsev A.A.; Mokerov V.G.; Fedorov Y.V.; Imamov R.M.

MOS-Controlled Thyristor: A Study of a Promising Power-Switching Device
pp. 318-322(5)
Authors: Chernyavskii E.V.; Popov V.P.; Pakhmutov Y.S.; Safronov L.N.

Trench-Gate MOS-Controlled Thyristor: An Evaluation
pp. 323-325(3)
Authors: Chernyavskii E.V.; Popov V.P.; Pakhmutov Y.S.; Safronov L.N.

Effect of Discontinuities on ULSI On-Chip Interconnection Characteristics
pp. 326-334(9)
Author: Goryachev V.A.

Instability Conditions of the Stationary Nonconducting State for the Bispin
pp. 335-339(5)
Author: Lysenko A.P.