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Publisher: MAIK Nauka/Interperiodica

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Volume 44, Number 7, July 2010

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Photoprocesses in a semiconducting carbon photocapacitor with a double electrical layer
pp. 835-840(6)
Authors: Ivashchyshyn, F.; Grygorchak, I.; Bakhmatyuk, B.

Physics with isotopically controlled semiconductors
pp. 841-853(13)
Author: Haller, E.

Optical properties of quaternary GaN x As y P1 − xy semiconductor alloys
pp. 857-860(4)
Authors: Egorov, A.; Kryzhanovskaya, N.; Pirogov, E.; Pavlov, M.

Dependence of photoluminescence spectra of epitaxial Pb1 − x Eu x Te (0 ≤ x ≤ 0.1) alloy layers on conditions of growth
pp. 861-866(6)
Authors: Pashkeev, D.; Selivanov, Yu.; Felder, F.; Zasavitskiy, I.

Calculation of the charge-carrier mobility in diamond at low temperatures
pp. 867-871(5)
Authors: Baturin, A.; Gorelkin, V.; Soloviev, V.; Chernousov, I.

Bistable low temperature (77 K) impurity breakdown in p-type 4H-SiC
pp. 872-874(3)
Authors: Ivanov, P.; Potapov, A.; Samsonova, T.

Features of conduction mechanisms in Si/oligo--naphthol/metal heterostructures
pp. 875-878(4)
Authors: Hasannli, Sh.; Mursakulov, N.; Samedova, U.; Abdulzade, N.; Mamedov, B.; Guseynov, R.

Effect of rectification of current induced by an electromagnetic wave in graphene: A numerical simulation
pp. 879-883(5)
Authors: Zavyalov, D.; Kryuchkov, S.; Tyul’kina, T.

Study of defects in heterostructures with GaPAsN and GaPN quantum wells in the GaP matrix
pp. 893-897(5)
Authors: Rumyantsev, O.; Brunkov, P.; Pirogov, E.; Egorov, A.

Electron transport in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well with a -Si doped barrier in high electric fields
pp. 898-903(6)
Authors: Vasil’evskii, I.; Galiev, G.; Matveev, Yu.; Klimov, E.; Požela, J.; Požela, K.; Sužiedėlis, A.; Paškevič, Č.; Jucienė, V.

Varistor effect in polymer-semiconductor composites
pp. 904-911(8)
Authors: Kerimov, M.; Kurbanov, M.; Sultanahmedova, I.; Faradzhzade, I.; Tatardar, F.; Aliyev, H.; Yahyaev, F.; Yusifova, U.

Numerical simulation of time-dependent geminate recombination in polymers
pp. 912-918(7)
Authors: Korolev, N.; Nikitenko, V.; Tyutnev, A.

Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures
pp. 919-923(5)
Authors: Egorov, A.; Gladyshev, A.; Nikitina, E.; Denisov, D.; Polyakov, N.; Pirogov, E.; Gorbazevich, A.

The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes
pp. 924-930(7)
Authors: Sizov, V.; Tsatsulnikov, A.; Sakharov, A.; Lundin, W.; Zavarin, E.; Cherkashin, N.; Hÿtch, M.; Nikolaev, A.; Mintairov, A.; He, Yan; Merz, J.

Ultrahigh-power picosecond current switching by a silicon sharpener based on successive breakdown of structures
pp. 931-937(7)
Authors: Lyubutin, S.; Rukin, S.; Slovikovsky, B.; Tsyranov, S.

Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy
pp. 938-945(8)
Authors: Saidov, A.; Saidov, M.; Usmonov, Sh.; Asatova, U.

Structural and optical properties of InAlN/GaN distributed Bragg reflectors
pp. 949-953(5)
Authors: Usov, S.; Zavarin, E.; Tsatsul’nikov, A.; Lundin, V.; Sakharov, A.; Nikolaev, A.; Sinitsyn, M.; Kryzhanovskaya, N.; Troshkov, S.; Ledentsov, N.

Fabrication of one-dimensional photonic crystals by photoelectrochemical etching of silicon
pp. 954-961(8)
Authors: Zharova, Yu.; Fedulova, G.; Gushchina, E.; Ankudinov, A.; Astrova, E.; Ermakov, V.; Perova, T.

MBE growth and characterization of 5-m quantum-cascade lasers
pp. 962-968(7)
Authors: Mamutin, V.; Ustinov, V.; Boetthcher, J.; Kuenzel, H.

The problem of uniformity of properties of 4H-SiC CVD films
pp. 969-973(5)
Authors: Ivanov, A.; Strokan, N.; Scherbov, N.; Lebedev, A.

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