Carbon nanotube field emitters for planar emission vacuum micro-and nanoelectronics

Authors: Gavrilov, S.; Il'ichev, É.; Poltoratskii, É.¹; Rychkov, G.; Dvorkin, V.; Dzbanovsky, N.; Suetin, N.

Source: Technical Physics Letters, Volume 30, Number 7, July 2004 , pp. 609-611(3)

Publisher: MAIK Nauka/Interperiodica

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Abstract:

The design and manufacturing technology of carbon nanotube field emitters for novel devices of planar emission vacuum micro-and nanoelectronics are described. Prototypes of diode structures with such emitters are obtained in which the threshold field strength amounts to ∼2 V/μm and the direct to reverse current ratio exceeds 10⁵. The obtained small scatter of characteristics points to the possibility of creating integrated circuits possessing high operation speed and a working temperature range expanded from −60 to +30°C.

Document Type: Research article

DOI: 10.1134/1.1783418

Affiliations: 1: Email: polt@niifp.ru

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