MBE of InGaN/GaN heterostructures using ammonia as a source of nitrogen

Authors: Petrov, S.1; Kaidash, A.; Krasovitskii, D.; Sokolov, I.; Pogorel'skii, Yu.; Chalyi, V.; Shkurko, A.; Stepanov, M.; Pavlenko, M.; Baranov, D.

Source: Technical Physics Letters, Volume 30, Number 7, July 2004 , pp. 580-582(3)

Publisher: MAIK Nauka/Interperiodica

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Abstract:

InGaN/GaN heterostructures have been grown by molecular beam epitaxy (MBE) using ammonia as a source of nitrogen. The influence of the growth temperature and rate on the incorporation of indium into the epitaxial layers and the position of the corresponding photoluminescence peak has been studied. Based on these data, optimum growth conditions have been selected for the ammonia MBE of InGaN layers in the active region of light-emitting diodes operating in the blue/violet spectral range.

Document Type: Research article

DOI: 10.1134/1.1783408

Affiliations: 1: Email: support@semiteq.ru

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