Technical Physics Letters

Cathode-initiated breakdown in vacuum
pp. 445-447(3)
Authors: Emel'yanov, A.; Emel'yanova, E.; Serikov, I.

The effect of spatiotemporal fluctuations on the pulse propagation
pp. 448-450(3)
Authors: Khovanov, I.; Akopov, A.

Photoemission from gallium nitride
pp. 451-451(1)
Authors: Ainbund, M.; Vil'kin, E.; Pashuk, A.; Petrov, A.; Surikov, I.

Concentration inhomogeneities and phase diagrams of eutectic systems
pp. 452-453(2)
Authors: Ambrok, A.; Nemna, S.

Effective HF(DF) lasers pumped by nonchain chemical reaction initiated by self-sustained discharge
pp. 454-456(3)
Authors: Panchenko, A.; Tarasenko, V.

Depinning at the initial stage of the resistive transition in superconductors with a fractal cluster structure
pp. 457-460(4)
Author: Kuzmin, Yu.

Experimental study of the concentration dependence of resistivity in disordered macrosystems of the insulator-semiconductor type
pp. 461-462(2)
Author: Sotskov, V.

Transformation of the surface structure of bending-strained muscovite crystals
pp. 463-465(3)
Authors: Knyazev, S.; Korsukov, V.

Lateral emitter as a base element of integrated emission electronics
pp. 466-468(3)
Authors: Gavrilov, S.; Il'ichev, É.; Kozlitin, A.; Poltoratskii, É.; Rychkov, G.; Dzbanovskii, N.; Dvorkin, V.; Suetin, N.

Jointing fragments of a speckle diffuser
pp. 469-470(2)
Authors: Denisyuk, Yu.; Brui, E.; Ganzherli, N.; Orlov, V.

The long-range action of light on the microhardness of metals in stratified heterogeneous systems
pp. 471-473(3)
Authors: Tetelbaum, D.; Mendeleva, Yu.; Azov, A.

Intermittency of space charge waves
pp. 474-476(3)
Author: Zaiko, Yu.

EPR spectra and relaxation times of natural π-conjugated polymers doped with iodine
pp. 477-479(3)
Authors: Lebedev, Yu.; Kosykh, L.; Chuvyrov, A.; Ferrer-Anglada, N.; Mashkina, E.

The effect of hydrogen on the electric conductivity of tin oxide doped with yttrium
pp. 480-482(3)
Authors: Zolotukhin, I.; Kalinin, Yu.; Samokhina, O.; Sitnikov, A.

Acoustic channels and lenses in a medium with inhomogeneous velocity field
pp. 483-484(2)
Authors: Rozanov, N.; Sochilin, G.

Copper-containing nanocomposites: Synthesis and phase composition
pp. 485-486(2)
Authors: Zapsis, K.; Dzhumaliev, A.; Ushakov, N.; Kosobudskii, I.

Experimental study of the concentration dependence of the real part of permittivity in a paraffin-graphite disordered macrosystem
pp. 487-488(2)
Author: Sotskov, V.

Solution of the inverse problem of X-ray diffraction on periodic InGaN/GaN/Al₂O₃ nanostructures
pp. 489-493(5)
Authors: Krasil'nikov, A.; Punegov, V.; Faleev, N.

Electrical properties of metal-dysprosium oxide-gadolinium oxide-silicon structures
pp. 494-496(3)
Authors: Rozhkov, V.; Rodionov, M.

Molecular-dynamics study of dynamic vortex defects as the mechanism of relaxation in loaded solids
pp. 497-499(3)
Authors: Dmitriev, A.; Psakhie, S.

Measurement of high-power microwave pulses by resistive hot-electron sensors
pp. 500-502(3)
Authors: Goykhman, M.; Kovalev, N.; Kolganov, N.; Palitsin, A.

The parameters of phase separation in NT-50 alloy calculated from the internal friction kinetics
pp. 503-506(4)
Author: Arzhavitin, V.

Accelerating diffraction structure of the π type
pp. 507-508(2)
Authors: Abramov, S.; Alekseev, Yu.; Zayarny, D.; Ishkhanov, B.; Shvedunov, V.

Field evaporation of tungsten in the presence of adsorbed water
pp. 509-511(3)
Authors: Blashenkov, N.; Lavrent'ev, G.; Shrednik, V.

Silicon passivated by two-layer insulating films of ytterbium oxide and dysprosium oxide
pp. 512-514(3)
Authors: Rodionov, M.; Rozhkov, V.; Pashin, A.

Measuring the polarization characteristics of birefringent optical fibers using an interference technique
pp. 515-517(3)
Authors: Kotov, O.; Liokumovich, L.; Medvedev, A.; Markov, S.; Khlybov, A.

The effect of optical radiation on the semiconductor conductivity in a thin-film ferroelectric-semiconductor structure
pp. 518-521(4)
Authors: Afanas'ev, V.; Bulat, D.; Kaptelov, E.; Pronin, I.

Frequency-selective Josephson detector: Power dynamic range at subterahertz frequencies
pp. 522-524(3)
Authors: Shirotov, V.; Divin, Yu.

Conditions preventing thermal breakdown in semiconductor devices
pp. 525-528(4)
Authors: Tsendin, K.; Shmelkin, A.