Photovoltaic X-ray detectors made of CdTe crystals with a p-n junction

Authors: Dvoryankin, V.; Dvoryankina, G.; Ivanov, Yu.; Kudryashov, A.; Petrov, A.

Source: Technical Physics, Volume 55, Number 7, July 2010 , pp. 1071-1073(3)

Publisher: MAIK Nauka/Interperiodica

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Abstract:

X-ray detectors made of CdTe crystals with a p-n junction obtained by diffusion of In into p-CdTe are investigated. The basic characteristics of such a detector are studied for the first time. It is found that the device is highly sensitive to X rays at a low bias voltage (to −50 V) and the X-ray effective energy in the range 28-72 keV. It is shown that photovoltaic detectors based on CdTe with p-n junctions are superior to Cd_0.9Zn_0.1Te ones.

Document Type: Research article

DOI: http://dx.doi.org/10.1134/S1063784210070273

Affiliations: 1: Email: vfd217@ire216.msk.su

Publication date: 2010-07-01