Photovoltaic X-ray detectors made of CdTe crystals with a p-n junction
Authors: Dvoryankin, V.; Dvoryankina, G.; Ivanov, Yu.; Kudryashov, A.; Petrov, A.
Source: Technical Physics, Volume 55, Number 7, July 2010 , pp. 1071-1073(3)
Publisher: MAIK Nauka/Interperiodica
Abstract:X-ray detectors made of CdTe crystals with a p-n junction obtained by diffusion of In into p-CdTe are investigated. The basic characteristics of such a detector are studied for the first time. It is found that the device is highly sensitive to X rays at a low bias voltage (to −50 V) and the X-ray effective energy in the range 28-72 keV. It is shown that photovoltaic detectors based on CdTe with p-n junctions are superior to Cd0.9Zn0.1Te ones.
Document Type: Research article
Publication date: 2010-07-01