GaAsN-on-GaAs MBE using a DC plasma source
Authors: Zhukov, A.; Semenova, E.; Ustinov, V.; Weber, E.
Source: Technical Physics, Volume 46, Number 10, October 2001 , pp. 1265-1269(5)
Publisher: MAIK Nauka/Interperiodica
Abstract:A new dc plasma source for MBE growth of GaAsN layers is suggested. The efficiency of nitrogen incorporation, crystal perfection, surface morphology, and luminescent properties of the epilayers vs. operation conditions of the source are studied.
Document Type: Research Article
Publication date: 2001-10-01